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SEMICONDUCTOR

Electronic and Optoelectronic Properties of Semiconductor Structures - singh
127 An overview of how semiconductor bandstructure influences device performance
236 Auger coefficients of some semiconductors.
231 Breakdown electric fields in some materials
447 Electro-optic coefficients for some materials
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288 Bandgaps along with electron and hole mobilities in several semiconductors
384  Values of Ep for different semiconductors
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J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures, Cambridge University Press, 2003. https://books.google.fr/books?id=HWJmngEACAAJ. Page 127; 236; 231; 447; 228; 384.

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Thin Film Materials Technology
201 Thin Film Materials and Applications
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K. Wasa, M. Kitabatake, H. Adachi, Thin Film Materials Technology: Sputtering of Compound Materials, Elsevier Science, 2004. https://books.google.fr/books?id=pmpV4RYHpdcC. Page 201.

Solar Energy Conversion 
209 Schottky junction barrier energies (eV)
85  The square of the intrinsic carrier concentration
83-91 Electrons and Holes
103 ELECTRON AND HOLE LIFE TIME
94-95 Electron hole mobility
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103 ELECTRON AND HOLE LIFE TIME
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------------------------------------------------------------------------------------------------------------------- 94-95 Electron hole mobility
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------------------------------------------------------------------------------------------------------------------- 145-148 Reflection and Absorption The electrical power density, Limit Thickness
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------------------------------------------------------------------------------------------------------------------- 122 The reflection coefficient, f
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------------------------------------------------------------------------------------------------------------------- 130 Energy gap values and Refractive Index
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------------------------------------------------------------------------------------------------------------------- A. R.C. Neville, Solar Energy Conversion: The Solar Cell, Elsevier Science, 1995. https://books.google.fr/books?id=B1Gbvn0uhdYC. Page 209; 85; 83-91; 103; 94-95; 145-148; 122; 130.

Wiley - Physics of Semiconductor Devices
501 Comparison of Semiconductor Materials for Power Applications
467 Semiconductor Materials Related to Transferred-Electron Effect at 300 K
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------------------------------------------------------------------------------------------------------------------- 184-186 Measured Barrier Heights
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------------------------------------------------------------------------------------------------------------------- 737-740  Physical Constants and Properties of Si and GaAs
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S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, Wiley, 2006. https://books.google.fr/books?id=o4unkmHBHb8C. Page 501; 184-186;737-740.

Advanced-semiconductor-fundamentals-se-robert-f-pierret
9-13 Basic Semiconductor Properties
121  Concentration parameter
104  Density of states effectives masses for Ge, Si, GaAs
89-91 Electron hole effective masses 
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------------------------------------------------------------------------------------------------------------------- 89-91 Electron hole effective masses
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------------------------------------------------------------------------------------------------------------------- A. R.F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley, 1996. https://books.google.fr/books?id=GMZFHwAACAAJ. Page 9-13, 121, 104, 89-91.



Semiconductor Physics And Devices 3rd ed. - J. Neamen
132 Effective density of states and Values of ni
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178 Typical Mobility Values at T=300K and low doping concentrations













  





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------------------------------------------------------------------------------------------------------------------- 141-142 Impurity ionization energies in silicon, germanium and Gallium arsenide
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------------------------------------------------------------------------------------------------------------------- 199 Typical mobility and diffusion coefficient values at T=300K
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------------------------------------------------------------------------------------------------------------------- A. D.A. Neamen, Semiconductor physics and devices: basic principles, McGraw-Hill, 2003. https://books.google.fr/books?id=TPE9AQAAIAAJ. Page 132; 178; 141-142; 199.

2100516434semiconducteurs

31;37;39 Energie du gap des différents semiconducteurs
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H. Mathieu, H. Fanet, Physique des semiconducteurs et des composants électroniques - 6ème édition: Cours et exercices corrigés, Dunod, 2009. https://books.google.fr/books?id=vAXJsXS0yosC. Page 31;37;39.
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Reference Data for Engineers
660 PROPERTIES OF SEMICONDUCTOR MATERIAL (300 K)
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M.E. Van Valkenburg, W.M. Middleton, Reference Data for Engineers: Radio, Electronics, Computers and Communications, Elsevier Science, 2002. https://books.google.fr/books?id=R67HARlhisYC. Page 660.
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Thin Film Solar Cells- Fabrication, Characterization and Applications
282 Shallow dopants in CdTe
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J. Poortmans, V. Arkhipov, Thin Film Solar Cells: Fabrication, Characterization and Applications, Wiley, 2006. https://books.google.fr/books?id=SvVYBK6YAxAC. Page 282.
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Claus F. Klingshirn Semiconductor Optics 4th ed. - 2012
199-203; 585  An Overview of Semiconducting Materials
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C.F. Klingshirn, Semiconductor Optics, Springer Berlin Heidelberg, 2012. https://books.google.fr/books?id=Jwl6v3JGxaYC. Page 199-203; 585.

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 Electrochemistry of semiconductors and electronics.. processes and devices
196 Properties of Candidate Semiconductors
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J. McHardy, F. Ludwig, Electrochemistry of semiconductors and electronics: processes and devices, Noyes Publications, 1992. https://books.google.fr/books?id=uWBwAAAAIAAJ. Page 196.

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Luminescent Materials and Applications
40 Band gap and Bohr radii data for selected semiconductor
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A. Kitai, Luminescent Materials and Applications, Wiley, 2008. https://books.google.fr/books?id=yLy07tnBZ90C. Page 40.

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PROCEDE DE DEPOT DE COUCHE MINCE

Nanostructured Materials for Advanced Technological Applications
422 Cross section of an MBE
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J. Reithmaier, P. Petkov, W. Kulisch, C. Popov, Nanostructured Materials for Advanced Technological Applications, Springer Netherlands, 2009. https://books.google.fr/books?id=_iSdAv8_yGUC. Page 422.

Electronic and Optoelectronic Properties of Semiconductor Structures - singh
25-34     CRYSTAL GROWTH
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J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures, Cambridge University Press, 2003. https://books.google.fr/books?id=HWJmngEACAAJ. Page 24-35.


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Thin Film Materials Technology 
200-227    Deposition Methods for Compound Thin Films
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59-60 Periodic Table of Elements with Deposition Condition
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44-57    THIN FILM DEPOSITION PROCESS
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K. Wasa, M. Kitabatake, H. Adachi, Thin Film Materials Technology: Sputtering of Compound Materials, Elsevier Science, 2004. https://books.google.fr/books?id=pmpV4RYHpdcC. Page 200-227; 59-60; 44-57.

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Luminescent Materials and Applications
252-253 Sputter deposition
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A. Kitai, Luminescent Materials and Applications, Wiley, 2008. https://books.google.fr/books?id=yLy07tnBZ90C. Page 252-253.

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Solution Processing of Inorganic Materials 
71  Summary of Film Deposition Methods
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D. Mitzi, Solution Processing of Inorganic Materials, Wiley, 2008. https://books.google.fr/books?id=gQ9VFEsS8-kC. Page 71.

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Practical Electronics for Inventors
483-485 Electronic Symbols
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P. Scherz, Practical Electronics for Inventors, McGraw-Hill, 2000. https://books.google.fr/books?id=HuPJqvWtedcC. Page 483-485.






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